Ion mass effect on vacancy-related deep levels in Si induced by ion implantation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.245201/fulltext
Reference25 articles.
1. Silicon Divacancy and its Direct Production by Electron Irradiation
2. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
3. Divacancy in silicon: Hyperfine interactions from electron-nuclear double resonance measurements
4. Divacancy in silicon: Hyperfine interactions from electron-nuclear double-resonance measurements. II
5. Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy Levels
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