Origins of1∕fnoise in individual semiconducting carbon nanotube field-effect transistors-Reference-Cited by-同舟云学术

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Origins of1∕fnoise in individual semiconducting carbon nanotube field-effect transistors

Published:2008-01-11 Issue:3 Volume:77 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Tobias David,Ishigami Masa,Tselev Alexander,Barbara Paola,Williams Ellen D.,Lobb Christopher J.,Fuhrer Michael S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.033407/fulltext

Reference25 articles.

1. 1/f noise in carbon nanotubes

2. Low-frequency fluctuations in solids:1fnoise

3. Extreme Oxygen Sensitivity of Electronic Properties of Carbon Nanotubes

4. 1∕f noise in single-walled carbon nanotube devices

5. Noise properties of an individual and two crossing multiwalled carbon nanotubes

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2. What Can Electric Noise Spectroscopy Tell Us on the Physics of Perovskites?;Coatings;2021-01-17

3. 1/f Noise in epitaxial sidewall graphene nanoribbons;Applied Physics Letters;2020-08-24

4. Probing Thermally Activated Atomic and Nanocrystalline Defect Motion Through Noise Processes in RuO2 Nanowires;Physical Review Applied;2020-08-18

5. Signal and Noise of Schottky-Junction Parallel Silicon Nanowire Transducers for Biochemical Sensing;IEEE Sensors Journal;2018-02-01

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