1/f Noise in epitaxial sidewall graphene nanoribbons-Reference-Cited by-同舟云学术

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1/f Noise in epitaxial sidewall graphene nanoribbons

Published:2020-08-24 Issue:8 Volume:117 Page:083105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vail O.¹,Hankinson J.¹,Berger C.¹²,de Heer W. A.¹³,Jiang Z.¹^ORCID

Affiliation:

1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA

2. UMI 2958 Georgia Tech–CNRS 2, rue Marconi, 57070 Metz, France

3. Tianjin International Center of Nanoparticles and Nanosystems, Tianjin University, 300072 Tianjin, China

Funder

Office of International Science and Engineering

EU flagship graphene

Agence Nationale de la Recherche

Division of Materials Research

Division of Electrical, Communications and Cyber Systems

Solar System Exploration Research Virtual Institute

FACE Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0020926

Reference43 articles.

1. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

2. Intrinsic and extrinsic performance limits of graphene devices on SiO2

3. One-Dimensional Electrical Contact to a Two-Dimensional Material

4. Exceptional ballistic transport in epitaxial graphene nanoribbons

5. Energy Band-Gap Engineering of Graphene Nanoribbons

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale mapping of relativistic photocarrier transports in epitaxial graphene surface and edge states;Carbon;2024-06

2. On the Use of Supercapacitors for DC Blocking in Transformer-Coupled Voltage Amplifiers for Low-Frequency Noise Measurements;Electronics;2022-06-27

3. Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene;Applied Physics Letters;2021-11-29

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