Electronic structure and hyperfine interactions for deep donors and vacancies in II-VI compound semiconductors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2505/fulltext
Reference33 articles.
1. Native defect identification in II–VI materials
2. Intrinsic defects in II–VI semiconductors
3. Proposed explanation of thep-type doping proclivity of ZnTe
4. Native Defect Compensation in Wide-Band-Gap Semiconductors
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