Tellurium vacancy in cadmium telluride revisited: Size effects in the electronic properties-Reference-Cited by-同舟云学术

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Tellurium vacancy in cadmium telluride revisited: Size effects in the electronic properties

Published:2015-08-06 Issue:12 Volume:252 Page:2649-2656
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Menéndez-Proupin E.¹²,Orellana W.³

Affiliation:

1. Departamento de Física, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, 780-0003 Ñuñoa; Santiago Chile

2. Instituto de Energía Solar and Dept. TFB, E.T.S.I. Telecommunicación, Universidad Politécnica de Madrid; Spain

3. Departamento de Ciencias Físicas, Universidad Andres Bello, República 220; 037-0134 Santiago Chile

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552357/fullpdf

Reference24 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. R. Triboulet P. Siffert

3. Fcenter in CdTe

4. Vacancies in CdTe: experiment and theory

5. Electronic structure and hyperfine interactions for deep donors and vacancies in II-VI compound semiconductors

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2. Effects of vacancies on the electronic structures and photocatalytic properties of g-C3N4;Vacuum;2022-12

3. An analysis of point defects in ZnTe using density functional theory calculations;Journal of Alloys and Compounds;2022-11

4. Impact of metastable defect structures on carrier recombination in solar cells;Faraday Discussions;2022

5. Bismuth Doping of CdTe: The Effect of Spin–Orbit Coupling;physica status solidi (b);2020-06-02

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