Comments on ‘‘Electronic structure of hydrogenated and unhydrogenated amorphousSiNx(0≤x≤1.6): A photoemission study’’
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.2845/fulltext
Reference10 articles.
1. Electronic structure of hydrogenated and unhydrogenated amorphousSiNx (0≤x≤1.6): A photoemission study
2. The chemical structure of trapped charge sites formed at the Si/SiO2 interface by ionizing radiation as determined by XPS
3. Interpretation of auger energy shifts of silicon in solid silicon compounds
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