Dynamic growth steps ofn×ndimer–adatom–stacking-fault domains on the quenched Si(111) surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.12907/fulltext
Reference15 articles.
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1. Coexistence of domains: group IV elements and IV–IV compounds: Si;Physics of Solid Surfaces;2018
2. Atomically resolved observation of the quenched Si(111) surface with small amplitude dynamic force microscopy;Journal of Applied Physics;2006-05-15
3. Formation mechanism of the Si(111)7×7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves;Surface Science;2003-03
4. Influence of1×1defects on Schottky barrier height at theAg/Si(111)7×7interface;Physical Review B;2002-08-01
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