Influence of1×1defects on Schottky barrier height at theAg/Si(111)7×7interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.073301/fulltext
Reference21 articles.
1. The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AES
2. X-ray scattering study of Ag/Si(111) buried interface structures
3. Boundary-structure determination of Ag/Si(111) interfaces by x-ray diffraction
4. Interface Structure and Preferred Orientation of Ag/Si(111) Revealed by X-Ray Diffraction
5. Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces
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1. Effective quantum-well width of confined electrons in ultrathin Ag(111) films on Si(111)7 × 7 substrates;Surface Science;2021-02
2. Interface Induced STM Image at Ultrathin Ag(111) Films on Si(111)√3×√3-B Substrates;Vacuum and Surface Science;2018-10-10
3. X-ray structural analysis of an epitaxially grown Ag film/Si(111)$\sqrt{3} \times \sqrt{3} $-B substrate interface;Japanese Journal of Applied Physics;2018-06-20
4. Acoustic vibrations of amorphous and crystalline ZrO2–TiO2 nanoparticles;Journal of Molecular Structure;2014-09
5. Regular ripples at the surfaces of heteroepitaxially grown Ag(111) ultra-thin films on Si(111) √3 × √3-B substrates;Applied Physics Letters;2014-05-12
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