Surface metallization of silicon by potassium adsorption on Si(001)-(2×1)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.2955/fulltext
Reference68 articles.
1. The schottky barrier problem
2. The structure and properties of metal-semiconductor interfaces
3. Theoretical models of Schottky barriers
4. Semiconductor surface structures
5. Surface States and Rectification at a Metal Semi-Conductor Contact
Cited by 98 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microscopic Origin of Polarization Charges at GaN / (Al,Ga)N Interfaces;Physical Review Applied;2023-06-12
2. Ultrathin films of Ge on the Si(100)2 × 1 surface;Surface and Interface Analysis;2017-11-28
3. Relation of lifetime to surface passivation for atomic-layer-deposited Al2O3 on crystalline silicon solar cell;Materials Science and Engineering: B;2015-03
4. Adsorption of Potassium on MoS2(100) Surface: A First-Principles Investigation;The Journal of Physical Chemistry C;2011-04-15
5. Atomic and electronic structures of rubidium adsorption on Si(001)(2×1) surface: Comparison with Cs/Si(001) surface;Chemical Physics;2006-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3