Carrier thermal escape in families of InAs/InP self-assembled quantum dots-Reference-Cited by-同舟云学术

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Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Published:2010-06-18 Issue:23 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Gélinas Guillaume,Lanacer Ali,Leonelli Richard,Masut Remo A.,Poole Philip J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.235426/fulltext

Reference37 articles.

1. Optical Spin Initialization and Nondestructive Measurement in a Quantum Dot Molecule

2. Effect of carrier emission and retrapping on luminescence time decays in InAs/GaAs quantum dots

3. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots

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1. Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window;Materials for Quantum Technology;2024-01-30

2. Link between shape dependent lifetimes and thermal escape in quantum dots and rings;Physical Review Research;2024-01-23

3. Activation energy distribution in thermal quenching of exciton and defect-related photoluminescence of InP/ZnS quantum dots;Journal of Luminescence;2022-02

4. Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2022-01

5. Optical Properties of Site-Selectively Grown InAs/InP Quantum Dots with Predefined Positioning by Block Copolymer Lithography;Materials;2021-01-14

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