Influence of confinement energy and band anticrossing effect on the electron effective mass inGa1−yInyNxAs1−xquantum wells
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.233301/fulltext
Reference33 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Theory of enhanced bandgap non-parabolicity in GaNxAs1−x and related alloys
3. Optical Spectroscopic Studies of N-Related Bands in Ga(N,As)
4. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
5. Band structure and optical properties ofInyGa1−yAs1−xNxalloys
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