Interplay of structural design and interaction processes in tunnel-injection semiconductor lasers
Author:
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.98.165431/fulltext
Reference48 articles.
1. 0.98-μm multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth
2. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
3. High-speed quantum dot lasers
4. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
5. High-speed 1.3μm tunnel injection quantum-dot lasers
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2. Carrier dynamics in quantum-dot tunnel-injection structures: Microscopic theory and experiment;Applied Physics Letters;2022-09-05
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