Direct determination of the electron-tunneling escape time from a GaAs/AlxGa1−xAs quantum well by transient-capacitance spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.3157/fulltext
Reference26 articles.
1. Tunneling escape rate of electrons from quantum well in double-barrier heterostructures
2. Tunneling escape time of electrons from a quantum well under the influence of an electric field
3. New floating-gate AlGaAs/GaAs memory devices with graded-gap electron injector and long retention times
4. High‐detectivityD*=1.0×1010cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
5. Observation of nonlinear optical rectification at 10.6 μm in compositionally asymmetrical AlGaAs multiquantum wells
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