New floating-gate AlGaAs/GaAs memory devices with graded-gap electron injector and long retention times-Reference-Cited by-同舟云学术

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New floating-gate AlGaAs/GaAs memory devices with graded-gap electron injector and long retention times

Published:1988-08 Issue:8 Volume:9 Page:377-379
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Capasso F.,Beltram F.,Malik R.J.,Walker J.F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/49/00000749.pdf?arnumber=749

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles;Microelectronics Reliability;2012-11

2. Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices;IEEE Transactions on Device and Materials Reliability;2004-09

3. Sub-20-nm Electron Devices;Advanced Semiconductor and Organic Nano-Techniques;2003

4. Multilayer heterostructures with asymmetric barriers as new components for nonlinear transmission lines to generate high-frequency oscillations in the 100-300 GHz range;International Journal of Infrared and Millimeter Waves;2002

5. Riding the crest of a new wave in memory [NOVORAM];IEEE Circuits and Devices Magazine;2000-07

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