Hot-Electron Transfer in Gallium Antimonide from Infrared Faraday Effect
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.3.416/fulltext
Reference21 articles.
1. MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
2. Hall Effect ofn-Type GaAs in High Electric Fields
3. Determination of the Hall-mobility of hot electrons in gallium-arsenide using 8 mm-microwaves
4. High Electric Field Effects and Electron Transfer to Higher Conduction Band Minima in Gallium Antimonide
5. Magnetoresistance and Hall Effect of Hot Electrons in Germanium and Carrier Transfer to Higher Minima
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental Studies of Nonlinear Transport in Semiconductors;Physics of Nonlinear Transport in Semiconductors;1980
2. A study of conduction-band L-states in GaSb through observations of the influence of uniaxial stress on its infrared free-carrier absorption;Journal of Physics C: Solid State Physics;1976-10-28
3. Effect of intervalley transfer on microwave Faraday effect in n−GaSb;Journal of Applied Physics;1975-01
4. Hot Electron Faraday Rotation and Birefringence in Semiconductors with Non-Parabolic Energy Bands;Physica Status Solidi (b);1973-08-01
5. Magnetooptic Faraday effect in semiconductors;Uspekhi Fizicheskih Nauk;1973
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