High Electric Field Effects and Electron Transfer to Higher Conduction Band Minima in Gallium Antimonide
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Temperature Dependence of Carrier Concentrations and Conduction‐Band Minima Separation of Gallium Antimonide
2. Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbar
3. The intervalley transfer mechanism of negative resistivity in bulk semiconductors
4. The gunn effect and conduction band structure in GaxIn1−xSb alloys
5. Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductors
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1. Chapter 1 Low-Field Electron Transport;Semiconductors and Semimetals;1975
2. Interaction entre les défauts ponctuels créés, les parois de Bloch et les dislocations dans le nickel irradié aux électrons à basse température;Philosophical Magazine;1973-10
3. Negative differential mobility in III–V and II–VI semiconducting compounds;La Rivista Del Nuovo Cimento;1971-10
4. Scattering Mechanisms of Thermal and Hot Electrons in GaSb;Physica Status Solidi (b);1971-06-01
5. Monte carlo calculation of NDR in gallium antimonide;Physica Status Solidi (a);1971-05-16
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