Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.7880/fulltext
Reference33 articles.
1. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
2. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy
3. Observation of the InP surface thermally cleaned in an arsenic flux using a scanning tunneling microscope
4. Atom-resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopy
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1. Study of the confined states in AlxGa1−xAs/GaAs/vacuum surface quantum well;Journal of Applied Physics;2014-04-14
2. Structures and electronics of buried and unburied semiconductor interfaces;IOP Conference Series: Materials Science and Engineering;2011-09-19
3. Imaging ofc(8×2)∕(4×6)GaAs(001)surface with noncontact atomic force microscopy;Physical Review B;2005-04-15
4. Electronic states in near-surface quantum wells;Surface Science;1998-12
5. Insulator passivation of In/sub 0.2/Ga/sub 0.8/As-GaAs surface quantum wells;IEEE Journal of Quantum Electronics;1998
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