Electron accumulation at undoped AlSb-InAs quantum wells: Theory
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.13478/fulltext
Reference14 articles.
1. Quantum Hall effect in InAs/AlSb quantum wells
2. Experimental observation of large room‐temperature current gains in a Stark effect transistor
3. Are there Tamm-state donors at the InAs–AlSb quantum well interface?
4. Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells
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