Atomic structure of the interface between silicon (111) and amorphous germanium-Reference-Cited by-同舟云学术

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Atomic structure of the interface between silicon (111) and amorphous germanium

Published:2004-11-08 Issue:19 Volume:70 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Borgardt N. I.,Plikat B.,Schröter W.,Seibt M.,Wagner Th.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.70.195307/fulltext

Reference45 articles.

1. Ion-beam-induced epitaxial crystallization and amorphization in silicon

2. Orientation dependence of high speed silicon crystal growth from the melt

3. Semiconductor molecular‐beam epitaxy at low temperatures

4. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

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1. Two-Dimensional Ultrathin Silica Films;Chemical Reviews;2022-06-22

2. Characterizing interface structure between crystalline and ion bombarded silicon by transmission electron microscopy and molecular dynamics simulations;Applied Surface Science;2021-02

3. The In-Plane Structure and Dynamic Property of the Homogeneous Al-Al Solid-Liquid Interface;Metals;2018-08-02

4. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111);Surface Science;2016-09

5. Three-Dimensional Structure of a Simple Liquid at a Face-Centered-Cubic (001) Solid Surface Interface;Scientific Reports;2016-07

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