Band-gap narrowing in heavily defect-doped ZnO
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.25.7836/fulltext
Reference18 articles.
1. Heavily doped semiconductors and devices
2. Energy gap in Si and Ge: Impurity dependence
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5. Band-gap narrowing in heavily doped many-valley semiconductors
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