Effect of temperature on exciton trapping on interface defects in GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.31.2497/fulltext
Reference5 articles.
1. Low-temperature exciton trapping on interface defects in semiconductor quantum wells
2. High‐quality single GaAs quantum wells grown by metalorganic chemical vapor deposition
3. Transmission electron microscopy of interfaces in III–V compound semiconductors
4. Recombination Enhancement due to Carrier Localization in Quantum Well Structures
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