Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si-Reference-Cited by-同舟云学术

Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si

Published:2003-11-18 Issue:18 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Coutinho J.,Andersen O.,Dobaczewski L.,Bonde Nielsen K.,Peaker A. R.,Jones R.,Öberg S.,Briddon P. R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.184106/fulltext

Reference32 articles.

1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter

2. Kinetic study of the 830- and 889-cm−1infrared bands during annealing of irradiated silicon

3. Observation and theory of theV−O−H2complex in silicon

5. Hydrogen reactions with electron irradiation damage in silicon

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