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Magnetic tunnel junctions with single-layer-graphene tunnel barriers

Published:2014-05-27 Issue:18 Volume:89 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Li Wan,Xue Lin,Abruña H. D.,Ralph D. C.

Funder

National Science Foundation

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.89.184418/fulltext

Reference36 articles.

1. Device implications of spin-transfer torques

2. A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

3. Magnetic sensors for data storage: perspective and future outlook

4. Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices

5. Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions

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