Fermi-level pinning and interface states atCaF2/Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.8357/fulltext
Reference10 articles.
1. Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxialCaF2/Si(111) interface
2. Structure of the Si(111)-CaF2Interface
3. Band dispersion of an interface state: CaF2/Si(111)
4. Structure and bonding at the CaF2/Si (111) interface
5. Ground-state thermomechanical properties of some cubic elements in the local-density formalism
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1. Electron spectrum of a semiconductor quantum dot influenced by an interface;Physical Review B;1999-11-15
2. Self-assembled CaF2 nanostructures on silicon;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-07
3. Interface and overlayer structure of epitaxial CaF2 thin films on Si(111): An X-ray scattering study;Physica B: Condensed Matter;1996-04
4. Altered photoemission satellites atCaF2- andSrF2-on-Si(111) interfaces;Physical Review B;1996-01-15
5. Schottky-barrier height and electronic structure of the Si interface with metal silicides:CoSi2,NiSi2, andYSi2;Physical Review B;1994-09-15
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