Absence of double-bond formation on theGe(111)3×1−Nasurface studied by scanning tunneling microscopy-Reference-Cited by-同舟云学术

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Absence of double-bond formation on theGe(111)3×1−Nasurface studied by scanning tunneling microscopy

Published:2000-04-15 Issue:15 Volume:61 Page:9921-9924
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lee Geunseop,Kim Jonggeol,Chizhov I.,Mai H.,Willis R. F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.9921/fulltext

Reference23 articles.

1. Si(100) Surface Reconstruction: Spectroscopic Selection of a Structural Model

2. Newπ-Bonded Chain Model for Si(111)-(2×1) Surface

3. Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, andπ-Bonded Chains

4. Theory of the “Honeycomb Chain-Channel” Reconstruction ofM/Si(111)-(3×1)

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1. Ab initio study of Tl on Si(111)-(3×1) surface;physica status solidi (b);2014-06-27

2. Reinvestigation of the alkali-metal-induced Ge(111)3×1 reconstruction on the basis of boundary structure observations;Ultramicroscopy;2011-05

3. Ab initio study of Yb on the Ge(111)–(3×2) and Si(111)–(3×2) surfaces;Surface Science;2010-10

4. STM Investigation of the Boundary Structure of the Na/Ge(111)3¡¿1 Surface;Journal of the Korean Physical Society;2010-07-15

5. Stability, structural, and electronic properties of atomic chains onYb/Ge(111)3×2studied by STM and STS;Physical Review B;2010-04-15

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