Ab initio study of Tl on Si(111)-(3×1) surface
Author:
Affiliation:
1. Department of Physics; Aksaray University; 68100 Aksaray Turkey
2. Department of Physics; Gazi University; 06500 Ankara Turkey
3. Faculty of Engineering; Department of Engineering Physics, Ankara University; 06100 Ankara Turkey
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451077/fullpdf
Reference32 articles.
1. Angle-resolved photoelectron-spectroscopy study of the Si(111)3×3-Sn surface: Comparison with Si(111)3×3-Al, -Ga, and -In surfaces
2. Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometries
3. X-ray standing-wave and tunneling-microscope location of gallium atoms on a silicon surface
4. Al-√3 × √3 domain structure on Si(111)-7×7 observed by scanning tunneling microscopy
5. Structural determination of indium-induced Si(111) reconstructed surfaces by LEED analysis:(3×3)R30°and (4×1)
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tl on the Si(111)- surface: Density Functional Theory;Philosophical Magazine;2019-03-18
2. Double-atomic layer of Tl on Si(111): Atomic arrangement and electronic properties;Surface Science;2018-02
3. Thallium Biatomic Layer;Springer Theses;2017-11-03
4. Superconductivity in thallium double atomic layer and transition into an insulating phase intermediated by a quantum metal state;2D Materials;2017-02-02
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