Al-√3 × √3 domain structure on Si(111)-7×7 observed by scanning tunneling microscopy-Reference-Cited by-同舟云学术

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Al-√3 × √3 domain structure on Si(111)-7×7 observed by scanning tunneling microscopy

Published:1993-08-15 Issue:8 Volume:48 Page:5657-5660
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Takaoka Katsuya,Yoshimura Masamichi,Yao Takafumi,Sato Tomoshige,Sueyoshi Takashi,Iwatsuki Masashi

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.5657/fulltext

Reference11 articles.

1. Surface reactions of silicon with aluminum and with indium

2. Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bending

3. New Models for Metal-Induced Reconstructions on Si(111)

4. Si(111)3×3-Al: An Adatom-Induced Reconstruction

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2. Spin Textures on Tl/Si(111)-(1 $$\times $$ × 1);Spin-Orbit-Induced Spin Textures of Unoccupied Surface States on Tl/Si(111);2015

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4. First-Principles Calculations of Atomic and Electronic Properties of Tl and In on Si(111);Communications in Theoretical Physics;2010-09

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