Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.075306/fulltext
Reference27 articles.
1. Ultraviolet GaN Single Quantum Well Laser Diodes
2. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
3. From visible to white light emission by GaN quantum dots on Si(111) substrate
4. High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
5. GaN quantum dot density control by rf-plasma molecular beam epitaxy
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