New intrinsic defect in as-grown thermalSiO2on (111)Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.9501/fulltext
Reference14 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
2. Optically induced electron spin resonance and spin‐dependent recombination in Si/SiO2
3. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
4. Radiation-Induced Defect Centers in Thermally Grown Oxide Films
5. Defects and impurities in thermal oxides on silicon
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