First-principles calculations of 002 structure factors for electron scattering in strainedInxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.085326/fulltext
Reference38 articles.
1. Model based quantification of EELS spectra
2. Direct measurement of local lattice distortions in strained layer structures by HREM
3. Transmission electron microscopy of interfaces in III–V compound semiconductors
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