Pressure study of metastability inGa1−xA1xAsGaAs:Siheterojunctions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.37.1031/fulltext
Reference11 articles.
1. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
2. Pressure and compositional dependences of the Hall coefficient inAlxGa1−xAsand their significance
3. Long‐lifetime photoconductivity effect inn‐type GaAlAs
4. Observation of the Persistent Photoconductivity Due to the DX Center in GaAs under Hydrostatic Pressure
5. Donor Levels in Si-Doped AlGaAs Grown by MBE
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Two-dimensional electron-gas mobility in GaAs/AlxGa1−xAs: Deformation-potential study including hydrostatic-pressure effects;Physical Review B;1995-10-15
2. Emission energies of Si-DX centers in various AlGaAs microstructures;Journal of Physics and Chemistry of Solids;1995-03
3. Correlations of the remote impurity charges—A method of 2DEG mobility tuning in GaAs/AlGaAs heterostructures;Solid-State Electronics;1994-04
4. Magnetophonon resonances in quantum wires;Surface Science;1994-03
5. Persistent photoconductivity and two-band effects in GaAs/AlxGa1−xAs heterojunctions;Physical Review B;1990-05-15
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