Termination layer dependence of Schottky barrier height forLa0.6Sr0.4MnO3/Nb:SrTiO3heterojunctions-Reference-Cited by-同舟云学术

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Termination layer dependence of Schottky barrier height forLa0.6Sr0.4MnO3/Nb:SrTiO3heterojunctions

Published:2010-06-21 Issue:23 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Minohara M.,Yasuhara R.,Kumigashira H.,Oshima M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.235322/fulltext

Reference29 articles.

1. Engineered Interface of Magnetic Oxides

2. Electrical properties and colossal electroresistance of heteroepitaxialSrRuO3∕SrTi1−xNbxO3(0.0002⩽x⩽0.02)Schottky junctions

3. Efficient photocarrier injection in a transition metal oxide heterostructure

4. Insulator-metal transition induced by interlayer coupling inLa0.6Sr0.4MnO3/SrTiO3superlattices

5. Inherent charge transfer layer formation at La0.6Sr0.4FeO3∕La0.6Sr0.4MnO3 heterointerface

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