Formation of semi-insulating InP through metallic Cu-rich precipitates
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.12460/fulltext
Reference23 articles.
1. III–V Technology: The Key for Advanced Devices
2. Titanium‐doped semi‐insulating InP grown by the liquid encapsulated Czochralski method
3. Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere
4. Microstructure of annealed low-temperature-grown GaAs layers
5. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
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1. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018
2. Annealed semi-insulating p-type InP grown by the Czochralski technique with Cu in the melt;Semiconductor Science and Technology;2006-07-21
3. Picosecond carrier recombination in semiconductors measured by dynamic nonlinear refractivity;Semiconductor Science and Technology;2001-01-22
4. Enhanced drift velocity of photoelectrons in a semiconductor with ultrafast carrier recombination;Semiconductor Science and Technology;1999-09-14
5. Ruthenium: A superior compensator of InP;Applied Physics Letters;1998-12-28
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