Asymptotic corrections to the potential of impurity ions in semiconductors with spatially variable dielectric constants
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.15.3281/fulltext
Reference7 articles.
1. Theory of the screening of impurity ions in semiconductors with spatially-variable dielectric constants
2. Space Dependence of Dielectric Function in Si Crystal
3. Spatial Dielectric Function of Ge Crystal
4. A variational principle for the potential of impurity ions in semiconductors with spatially variable dielectric constants
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1. New generalization of dielectric screening in electronic devices with heavily doped semiconductor region(s). I. Treatment for the quasi-neutral bulk region;Philosophical Magazine B;1993-05
2. Solution of a nonlinear Poisson’s equation for the potential of impurity ions in semiconductors with a spatially variable dielectric constant by an equivalent variational method;Physical Review B;1992-11-15
3. Corrections to the impurity-ion potential characterized by a spatially variable dielectric function; corresponding electron-conductivity mobility in silicon and germanium;Physical Review B;1979-05-15
4. Dielectric behavior of a doped semiconductor;Physical Review B;1979-03-15
5. Electron mobility in semiconductors based on a dielectric-function modification of the Dingle potential;Physical Review B;1979-01-15
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