States at epitaxial NiSi2/Si heterojunctions studied by deep-level transient spectroscopy and hydrogenation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.34.4415/fulltext
Reference19 articles.
1. Growth of single‐crystal CoSi2on Si(111)
2. Epitaxial silicides
3. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
4. Growth of single crystal epitaxial silicides on silicon by the use of template layers
5. Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor Interfaces
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