Effect of uniaxial stress on the excitonic molecule bound to nitrogen trap in GaP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.4710/fulltext
Reference17 articles.
1. Recombination processes associated with “Deep states” in gallium phosphide
2. Optical investigations of the undulation spectrum of GaP:N:Zn
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electronic structure of the substitutional nitrogenNN1pair in GaP from photoluminescence excitation and Zeeman spectroscopy;Physical Review B;1988-07-15
2. Reflectance spectroscopy on GaAs-Ga0.5Al0.5As single quantum wells under in-plane uniaxial stress at liquid-helium temperature;Physical Review B;1988-07-15
3. Excitons and polaritons in InP;Physical Review B;1985-09-15
4. Luminescence excitation spectroscopy of NN pairs in GaP:N under uniaxial stress;Solid State Communications;1985-02
5. Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:N;physica status solidi (b);1984-08-01
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