Probing the impact of microstructure on the electroluminescence properties of Ge-nanocrystal enriched Er-dopedSiO2layers-Reference-Cited by-同舟云学术

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Probing the impact of microstructure on the electroluminescence properties of Ge-nanocrystal enriched Er-dopedSiO2layers

Published:2009-04-14 Issue:16 Volume:79 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kanjilal A.,Rebohle L.,Baddela N. K.,Zhou S.,Voelskow M.,Skorupa W.,Helm M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.161302/fulltext

Reference19 articles.

1. Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-richSiO2with and without Si nanocrystals

2. Excitable Er fraction and quenching phenomena in Er-dopedSiO2layers containing Si nanoclusters

3. Nanosecond Dynamics of the Near-Infrared Photoluminescence of Er-DopedSiO2Sensitized with Si Nanocrystals

4. Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices

5. Room-temperature 1.54 μm electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n+-Si substrates by magnetron sputtering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation effects in nanoclusters embedded in solids;The European Physical Journal B;2014-10

2. Nanocrystals for silicon-based light-emitting and memory devices;Journal of Physics D: Applied Physics;2013-03-22

3. Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires;Nanotechnology;2012-01-17

4. The inverse energy transfer between Ge nanocrystals and erbium in SiO2 and its dependence on microstructure;Optical Materials;2011-05

5. Microstructure analysis at the interface of Er decorated Ge nanocrystals in SiO2;Physical Review B;2011-03-08

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