Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires-Reference-Cited by-同舟云学术

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Photophysics of resonantly and non-resonantly excited erbium doped Ge nanowires

Published:2012-01-17 Issue:6 Volume:23 Page:065702
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Manna S,Prtljaga N,Das S,Daldosso N,Ray S K,Pavesi L

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=6/a=065702/pdf

Reference29 articles.

1. Recent developments in rare-earth doped materials for optoelectronics

2. Erbium implanted thin film photonic materials

3. Silicon microphotonics

4. Synthesis and Characterization of Discrete Luminescent Erbium-Doped Silicon Nanocrystals

5. Erbium in silicon

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1. Progress in group-IV semiconductor nanowires based photonic devices;Applied Physics A;2023-02-25

2. Electronic and optoelectronic properties of intrinsic and cooper-doped germanium nanowire network devices;Materials Today: Proceedings;2021-10

3. The role of the solid electrolyte interphase layer in preventing Li dendrite growth in solid-state batteries;Energy & Environmental Science;2018

4. Rare earth substitutional impurities in germanium: A hybrid density functional theory study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-10

5. Germanium on seamless graphene carbon nanotube hybrids for lithium ion anodes;Carbon;2017-10

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