Deep electron traps in hydrogenated amorphous silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.24.7457/fulltext
Reference13 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Characterized of glow-discharge deposited a-Si:H
3. Light‐induced radiative recombination centers in hydrogenated amorphous silicon
4. Light‐induced dangling bonds in hydrogenated amorphous silicon
5. Stability ofn‐i‐pamorphous silicon solar cells
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