0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.4689/fulltext
Reference32 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Ultrafast nanoscale metal‐semiconductor‐metal photodetectors on bulk and low‐temperature grown GaAs
3. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
4. New approach to projection‐electron lithography with demonstrated 0.1 μm linewidth
5. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
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