Wafer curvature in molecular beam epitaxy grown heterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.054108/fulltext
Reference14 articles.
1. On a possibility of high-resolution characterization of InGaAs/GaAs multilayers using phase-retrieval x-ray diffractometry technique
2. Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation
3. Stress evolution during metalorganic chemical vapor deposition of GaN
4. Thermal stress in GaN epitaxial layers grown on sapphire substrates
5. Strain determination in heteroepitaxial GaN
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