Photoluminescence study of a bimodal size distribution of Ge/Si(001) quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.033313/fulltext
Reference20 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Size distribution of Ge islands grown on Si(001)
3. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
4. SiGe Island Shape Transitions Induced by Elastic Repulsion
5. Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes
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1. Effect of size distribution on the optical properties of quantum wire systems;International Journal of Modern Physics B;2014-06-03
2. Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxy;Journal of Crystal Growth;2013-09
3. Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography;Nanoscale Research Letters;2013-08-08
4. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands;Semiconductors;2012-11
5. High-density carrier dynamics in Ge/Si quantum dots studied by time-resolved photoluminescence spectroscopy;Journal of Non-Crystalline Solids;2012-09
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