SiGe Island Shape Transitions Induced by Elastic Repulsion-Reference-Cited by-同舟云学术

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SiGe Island Shape Transitions Induced by Elastic Repulsion

Published:1998-05-25 Issue:21 Volume:80 Page:4717-4720
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Floro J. A.,Lucadamo G. A.,Chason E.,Freund L. B.,Sinclair M.,Twesten R. D.,Hwang R. Q.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.80.4717/fulltext

Reference17 articles.

1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)

4. Crack-Like Sources of Dislocation Nucleation and Multiplication in Thin Films

5. Competing relaxation mechanisms in strained layers

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