Lateral-superlattice effects in very narrow strained semiconductor quantum wells grown on vicinal surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.13880/fulltext
Reference20 articles.
1. One-dimensional magneto-excitons in GaAs/AlxGa1−xAs quantum wires
2. Direct synthesis of corrugated superlattices on non-(100)-oriented surfaces
3. Strain‐induced lateral confinement of excitons in GaAs‐AlGaAs quantum well microstructures
4. Strain induced 2D–3D growth mode transition in molecular beam epitaxy of InxGa1t-xAs on GaAs (001)
5. Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces
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1. The localized electronic states and transmission spectra in N-layer superlattice with structural defects in finite magnetic fields;Acta Physica Sinica;2006
2. Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces;Journal of Applied Physics;2001-09
3. Arrangement of atoms and strain distribution in CdSe/ZnSe strained single quantum well on vicinal GaAs substrate;Journal of Applied Physics;2001-01
4. Strain distribution around the step edge of ZnSe/CdSe/ZnSe strained quantum well grown on vicinal GaAs substrate;Journal of Crystal Growth;2000-06
5. Resonant magnetotunnelling spectroscopy of a quantum loop;Solid-State Electronics;1996-01
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