Kinetics of vacancy diffusion on Si(111) surfaces studied by scanning reflection electron microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.5574/fulltext
Reference19 articles.
1. Layer-by-layer sputtering and epitaxy of Si(100)
2. Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1
3. Temperature Dependence of Etching with Molecular Fluorine on Si(111) Surface
4. Real-time observations of vacancy diffusion on Si(001)-(2×1) by scanning tunneling microscopy
5. Observation of Surface Micro-Structures by Micro-Probe Reflection High-Energy Electron Diffraction
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3. Attachment–detachment limited kinetics on ultra-flat Si(111) surface under etching with molecular oxygen at elevated temperatures;Surface Science;2015-03
4. Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation;Japanese Journal of Applied Physics;2007-01-10
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