Electronic structure models of phosphorusδ-doped silicon-Reference-Cited by-同舟云学术

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Electronic structure models of phosphorusδ-doped silicon

Published:2009-01-29 Issue:3 Volume:79 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Carter Damien J.,Warschkow Oliver,Marks Nigel A.,McKenzie David R.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.033204/fulltext

Reference25 articles.

1. Delta doping in silicon

2. Half-Metallic Digital Ferromagnetic Heterostructure Composed of aδ-Doped Layer of Mn in Si

3. Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si

4. Can single-electron integrated circuits and quantum computers be fabricated in silicon?

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure of boron and aluminum δ-doped layers in silicon;Journal of Applied Physics;2023-07-25

2. Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon;Advanced Science;2023-07-19

3. Probing the Atomic Arrangement of Subsurface Dopants in a Silicon Quantum Device Platform;ACS Applied Materials & Interfaces;2023-04-28

4. Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots;Nature Communications;2022-11-11

5. Conductivity and size quantization effects in semiconductor $$\delta$$-layer systems;Scientific Reports;2022-09-30

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