Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements-Reference-Cited by-同舟云学术

Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements

Published:2016-06-14 Issue:24 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ishii Tomoaki,Kawazoe Tadashi,Hashimoto Yusuke,Terada Hiroshi,Muneta Iriya,Ohtsu Motoichi,Tanaka Masaaki,Ohya Shinobu

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Japan Society for the Promotion of Science

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.241303/fulltext

Reference27 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport

3. Nearly non-magnetic valence band of the ferromagnetic semiconductor GaMnAs

4. Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism

5. Origin of the Anomalous Magnetic Circular Dichroism Spectral Shape in FerromagneticGa1−xMnxAs: Impurity Bands inside the Band Gap

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