Electrong-factor anisotropy in symmetric (110)-oriented GaAs quantum wells-Reference-Cited by-同舟云学术

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Electrong-factor anisotropy in symmetric (110)-oriented GaAs quantum wells

Published:2011-07-01 Issue:4 Volume:84 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hübner J.,Kunz S.,Oertel S.,Schuh D.,Pochwała M.,Duc H. T.,Förstner J.,Meier T.,Oestreich M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.041301/fulltext

Reference34 articles.

1. The Motion of the Spinning Electron

2. Spin-Orbit Coupling Effects in Zinc Blende Structures

3. Spin splitting in symmetrical SiGe quantum wells

4. Spintronics: Fundamentals and applications

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1. Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well;Journal of Applied Physics;2022-04-07

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3. Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems;Physical Review X;2018-06-18

4. Anisotropic in-plane spin dynamics in (110)-oriented GaAs/AlGaAs multiple quantum well;Journal of Applied Physics;2017-04-21

5. Time-Resolved Spin Dynamics and Spin Noise Spectroscopy;Springer Series in Solid-State Sciences;2017

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