Ab initiostudy of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1×1)surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.4486/fulltext
Reference23 articles.
1. Orientation and temperature dependence of H2S adsorption on cylindrical Ge and GaAs samples
2. Orientation-dependent surface core-level shifts and chemical shifts on clean and H2S-covered GaAs
3. Orientation and temperature dependent adsorption of H2S on GaAs: Valence band photoemission
4. Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEED
5. Universal Passivation Effect of (NH4)2SxTreatment on the Surface of III-V Compound Semiconductors
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4. Density functional theory studies of the adsorption of hydrogen sulfide on aluminum doped silicane;Journal of Molecular Modeling;2013-05-22
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