Orientation and temperature dependent adsorption of H2S on GaAs: Valence band photoemission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
1. Sulfur incorporation in VPE GaAs
2. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow
3. Defect-titration on cylindrical GaAs by H2S adsorption
4. Orientation-dependent surface core-level shifts and chemical shifts on clean and H2S-covered GaAs
5. Structure and reactivity of GaAs surfaces
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1. Electronic Structure of Adsorbates on Semiconductors;Electronic Structure;2000
2. Theoretical study of the GaAs(110)-(1×1)–H2S surface;Surface Science;1998-05
3. Ab initiostudy of atomic geometry, electronic states, and bonding for H2S adsorption on III-V semiconductor (110)-(1×1)surfaces;Physical Review B;1998-02-15
4. Thermal and photochemical pathways of H2S on GaAs(100);Surface Science;1997-06
5. Thermal and photochemical deposition of sulfur on GaAs(100);Applied Surface Science;1996-11
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